Samsung M4 70T5663QZ3-CE6 2GB vs Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

総合得点

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

総合得点

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

相違点仕様コメント

相違点

Samsung M4 70T5663QZ3-CE6 2GB

考慮すべき理由
Samsung M4 70T5663QZ3-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 15.3

テスト平均値

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

考慮すべき理由
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 68

周辺 -152% 低遅延
書き込み速度の高速化、GB/s

11.6 1,702.6

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

68 27
読み出し速度、GB/s

3,886.6 15.3
書き込み速度、GB/秒

1,702.6 11.6
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

654 2291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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