Samsung M4 70T5663QZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

総合得点

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

相違点仕様コメント

相違点

Samsung M4 70T5663QZ3-CE6 2GB

考慮すべき理由
Samsung M4 70T5663QZ3-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 3

テスト平均値
書き込み速度の高速化、GB/s

1,702.6 1,592.0

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

65 68

周辺 -5% 低遅延

仕様

技術仕様の完全リスト

Samsung M4 70T5663QZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

主な特徴

メモリータイプ

DDR2 DDR2
PassMarkにおけるレイテンシー、ns

68 65
読み出し速度、GB/s

3,886.6 3,580.8
書き込み速度、GB/秒

1,702.6 1,592.0
メモリ帯域幅、mbps

5300 5300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
タイミング / クロック速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
ランキングPassMark（多ければ多いほど良い）

654 572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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