Samsung M4 70T5663QZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M4 70T5663QZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Wynik ogólny

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Wynik ogólny

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Różnice Specyfikacje Uwagi

Różnice

Samsung M4 70T5663QZ3-CE6 2GB

Powody do rozważenia
Samsung M4 70T5663QZ3-CE6 2GB

Większa szybkość odczytu, GB/s

3 3

Średnia wartość w badaniach
Większa szybkość zapisu, GB/s

1,702.6 1,592.0

Średnia wartość w badaniach

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Powody do rozważenia
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Poniżej opóźnienia w testach PassMark, ns

65 68

Wokół strony -5% niższe opóźnienia

Specyfikacje

Pełna lista specyfikacji technicznych

Samsung M4 70T5663QZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Główna charakterystyka

Typ pamięci

DDR2 DDR2
Opóźnienie w PassMark, ns

68 65
Prędkość odczytu, GB/s

3,886.6 3,580.8
Prędkość zapisu, GB/s

1,702.6 1,592.0
Szerokość pasma pamięci, mbps

5300 5300

Other

Opis

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Taktowanie / szybkość zegara

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
Ranking PassMark (im więcej tym lepiej)

654 572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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