Samsung M471A1G44AB0-CWE 8GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

総合得点

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

総合得点

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

相違点仕様コメント

相違点

Samsung M471A1G44AB0-CWE 8GB

考慮すべき理由
Samsung M471A1G44AB0-CWE 8GB

バグを報告する

Micron Technology 4ATF1G64HZ-3G2B2 8GB

考慮すべき理由
Micron Technology 4ATF1G64HZ-3G2B2 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

39 50

周辺 -28% 低遅延
読み出し速度の高速化、GB/s

16.1 15.3

テスト平均値
書き込み速度の高速化、GB/s

11.9 10.9

テスト平均値

仕様

技術仕様の完全リスト

Samsung M471A1G44AB0-CWE 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

50 39
読み出し速度、GB/s

15.3 16.1
書き込み速度、GB/秒

10.9 11.9
メモリ帯域幅、mbps

25600 25600

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2512 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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