RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB

Samsung M471A1G44AB0-CWE 8GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
Micron Technology 4ATF1G64HZ-3G2B2 8GB 需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 50
    左右 -28% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 39
  • 读取速度，GB/s
    15.3 left arrow 16.1
  • 写入速度，GB/s
    10.9 left arrow 11.9
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 2782

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR24D4S7S1MB-4 4GB
Kingston ACR24D4S7S1MB-4 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9965600-033.A00G 16GB
Kingston 9965600-033.A00G 16GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3000C15-8GRK 8GB
G Skill Intl F4-3000C15-8GRK 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-011.A00G 32GB
Kingston 9905744-011.A00G 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Lenovo 16GB
Lenovo 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMU32GX4M4C3400C16 8GB
Corsair CMU32GX4M4C3400C16 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMK32GX4M2A2400C14 16GB
Corsair CMK32GX4M2A2400C14 16GB
内存RAM