Samsung M471A5244CB0-CWE 4GB vs Micron Technology 36ASF4G72PZ-2G1B1 32GB

総合得点

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

総合得点

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

相違点仕様コメント

相違点

Samsung M471A5244CB0-CWE 4GB

考慮すべき理由
Samsung M471A5244CB0-CWE 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.5 11.1

テスト平均値
書き込み速度の高速化、GB/s

12.0 6.9

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51% 高帯域

Micron Technology 36ASF4G72PZ-2G1B1 32GB

考慮すべき理由
Micron Technology 36ASF4G72PZ-2G1B1 32GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 38

周辺 -19% 低遅延

仕様

技術仕様の完全リスト

Samsung M471A5244CB0-CWE 4GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

38 32
読み出し速度、GB/s

15.5 11.1
書き込み速度、GB/秒

12.0 6.9
メモリ帯域幅、mbps

25600 17000

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2283 2238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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