Samsung M471B5173DB0-YK0 4GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

総合得点

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

総合得点

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

相違点仕様コメント

相違点

Samsung M471B5173DB0-YK0 4GB

考慮すべき理由
Samsung M471B5173DB0-YK0 4GB

バグを報告する

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

考慮すべき理由
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

38 45

周辺 -18% 低遅延
読み出し速度の高速化、GB/s

15.3 12

テスト平均値
書き込み速度の高速化、GB/s

10.5 7.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5173DB0-YK0 4GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

45 38
読み出し速度、GB/s

12.0 15.3
書き込み速度、GB/秒

7.8 10.5
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1939 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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