Samsung M471B5173QH0-YK0 4GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

総合得点

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

総合得点

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

相違点仕様コメント

相違点

Samsung M471B5173QH0-YK0 4GB

考慮すべき理由
Samsung M471B5173QH0-YK0 4GB

バグを報告する

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 45

周辺 -50% 低遅延
読み出し速度の高速化、GB/s

17.6 12.3

テスト平均値
書き込み速度の高速化、GB/s

13.9 8.0

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

45 30
読み出し速度、GB/s

12.3 17.6
書き込み速度、GB/秒

8.0 13.9
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1992 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Corsair CMU32GX4M4C3466C16 8GB

Corsair CMU32GX4M4C3466C16 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB