SK Hynix HMA451U6AFR8N-TF 4GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB

総合得点

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

総合得点

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

相違点仕様コメント

相違点

SK Hynix HMA451U6AFR8N-TF 4GB

考慮すべき理由
SK Hynix HMA451U6AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

37 42

周辺 12% 低遅延

Micron Technology 4ATF51264HZ-3G2J1 4GB

考慮すべき理由
Micron Technology 4ATF51264HZ-3G2J1 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.7 14.7

テスト平均値
書き込み速度の高速化、GB/s

12.4 10.6

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51 高帯域

仕様

技術仕様の完全リスト

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

37 42
読み出し速度、GB/s

14.7 15.7
書き込み速度、GB/秒

10.6 12.4
メモリ帯域幅、mbps

17000 25600

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2438 2352

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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Crucial Technology BL8G30C15U4W.M8FE 8GB

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Samsung M378B1G73AH0-CH9 8GB

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Corsair CM5S16GM4800A40K2 16GB

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Kingmax Semiconductor GSLF62F-D8---------- 4GB

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Apacer Technology 78.01GA0.9K5 1GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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