SK Hynix HMT151R7TFR4C-H9 4GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

総合得点

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

総合得点

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

相違点仕様コメント

相違点

SK Hynix HMT151R7TFR4C-H9 4GB

考慮すべき理由
SK Hynix HMT151R7TFR4C-H9 4GB

バグを報告する

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

考慮すべき理由
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

37 48

周辺 -30% 低遅延
読み出し速度の高速化、GB/s

21.4 10.1

テスト平均値
書き込み速度の高速化、GB/s

14.3 7.0

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

SK Hynix HMT151R7TFR4C-H9 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

48 37
読み出し速度、GB/s

10.1 21.4
書き込み速度、GB/秒

7.0 14.3
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1955 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Ramaxel Technology RMUA5200ME78HAF-3200 8GB

Ramaxel Technology RMUA5200ME78HAF-3200 8GB

Kingston 9965525-058.A00LF 8GB

Kingston 9965525-058.A00LF 8GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB