SK Hynix HYMP112S64CP6-S6 1GB vs Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

総合得点

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

総合得点

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

相違点仕様コメント

相違点

SK Hynix HYMP112S64CP6-S6 1GB

考慮すべき理由
SK Hynix HYMP112S64CP6-S6 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 15.4

テスト平均値

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

考慮すべき理由
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

37 65

周辺 -76% 低遅延
書き込み速度の高速化、GB/s

12.5 1,711.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

SK Hynix HYMP112S64CP6-S6 1GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 37
読み出し速度、GB/s

4,018.7 15.4
書き込み速度、GB/秒

1,711.1 12.5
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

513 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

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SK Hynix HMT425S6CFR6A-PB 2GB

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Apacer Technology 78.CAGP7.40C0B 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMK16GX4M2B3000C15 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

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Kingston 9965662-002.A01G 16GB

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Nanya Technology NT8GC64B8HB0NS-DI 8GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965596-019.B01G 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB