SK Hynix HYMP112U64CP8-Y5 1GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

総合得点

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

総合得点

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

相違点仕様コメント

相違点

SK Hynix HYMP112U64CP8-Y5 1GB

考慮すべき理由
SK Hynix HYMP112U64CP8-Y5 1GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

62 71

周辺 13% 低遅延
読み出し速度の高速化、GB/s

4 15.6

テスト平均値

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

考慮すべき理由
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

バグを報告する

書き込み速度の高速化、GB/s

6.4 1,658.4

テスト平均値
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

SK Hynix HYMP112U64CP8-Y5 1GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

62 71
読み出し速度、GB/s

4,216.7 15.6
書き込み速度、GB/秒

1,658.4 6.4
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

688 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

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Kingston 9905700-026.A00G 8GB

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SK Hynix HMT351S6CFR8C-H9 4GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

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A-DATA Technology DOVF1B163G2G 2GB

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

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Samsung M393B1G70BH0-CK0 8GB

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Golden Empire CL14-16-16 D4-2400 16GB

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Kingston 99U5403-036.A00G 4GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB