RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Comparar
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BL16G26C16U4B.16FD 16GB
Pontuação geral
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Pontuação geral
Crucial Technology BL16G26C16U4B.16FD 16GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Relatar um erro
Abaixo da latência nos testes do PassMark, ns
27
30
Por volta de 10% menor latência
Razões a considerar
Crucial Technology BL16G26C16U4B.16FD 16GB
Relatar um erro
Velocidade de leitura mais rápida, GB/s
17.2
16.7
Valor médio nos testes
Velocidade de escrita mais rápida, GB/s
14.5
11.8
Valor médio nos testes
Especificações
Lista completa de especificações técnicas
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
27
30
Velocidade de leitura, GB/s
16.7
17.2
Velocidade de escrita, GB/s
11.8
14.5
Largura de banda de memória, mbps
21300
21300
Other
Descrição
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Tempos / Velocidade do relógio
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (Quanto mais, melhor)
2756
3505
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB Comparações de RAM
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology BL16G26C16U4B.16FD 16GB Comparações de RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology V-GeN D4V16GL24A8R 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology 8G4US2400.M8B1 8GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology AFSD416ES1P 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston ACR32D4S2S1ME-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Relatar um erro
×
Bug description
Source link