Samsung 1600 CL10 Series 8GB vs Micron Technology ILG8GS2400A 8GB

Pontuação geral

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Pontuação geral

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Diferenças Especificações Comentários

Diferenças

Samsung 1600 CL10 Series 8GB

Razões a considerar
Samsung 1600 CL10 Series 8GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

16.1 15

Valor médio nos testes

Micron Technology ILG8GS2400A 8GB

Razões a considerar
Micron Technology ILG8GS2400A 8GB

Relatar um erro

Velocidade de escrita mais rápida, GB/s

11.4 10.1

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 12800

Por volta de 1.5 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung 1600 CL10 Series 8GB

Micron Technology ILG8GS2400A 8GB

Características principais

Tipo de memória

DDR3 DDR4
Latência em PassMark, ns

25 25
Velocidade de leitura, GB/s

16.1 15.0
Velocidade de escrita, GB/s

10.1 11.4
Largura de banda de memória, mbps

12800 19200

Other

Descrição

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Tempos / Velocidade do relógio

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

2764 2549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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