Samsung M3 78T2863QZS-CF7 1GB vs Shenzhen Technology Co Ltd 8GB

Pontuação geral

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Pontuação geral

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T2863QZS-CF7 1GB

Razões a considerar
Samsung M3 78T2863QZS-CF7 1GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 15.9

Valor médio nos testes

Shenzhen Technology Co Ltd 8GB

Razões a considerar
Shenzhen Technology Co Ltd 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

32 69

Por volta de -116% menor latência
Velocidade de escrita mais rápida, GB/s

11.9 1,857.7

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 6400

Por volta de 3 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T2863QZS-CF7 1GB

Shenzhen Technology Co Ltd 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

69 32
Velocidade de leitura, GB/s

4,217.2 15.9
Velocidade de escrita, GB/s

1,857.7 11.9
Largura de banda de memória, mbps

6400 19200

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

668 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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