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Samsung M3 78T2863QZS-CF7 1GB
Shenzhen Technology Co Ltd 8GB

Samsung M3 78T2863QZS-CF7 1GB vs Shenzhen Technology Co Ltd 8GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
Shenzhen Technology Co Ltd 8GB 需要考虑的原因
Shenzhen Technology Co Ltd 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 69
    左右 -116% 更低的延时
  • 更快的写入速度，GB/s
    11.9 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Shenzhen Technology Co Ltd 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 32
  • 读取速度，GB/s
    4,217.2 left arrow 15.9
  • 写入速度，GB/s
    1,857.7 left arrow 11.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2831

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Shenzhen Technology Co Ltd 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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AMD AE34G1601U1 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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G Skill Intl F4-2666C15-16GVK 16GB
内存RAM
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EVGA 8GX-D4-3000-MR 8GB
内存RAM
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