Samsung M3 78T3354BZ0-CCC 256MB vs Asgard VMA42UG-MEC1U2AW1 8GB

Pontuação geral

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Pontuação geral

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T3354BZ0-CCC 256MB

Razões a considerar
Samsung M3 78T3354BZ0-CCC 256MB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

2 14.7

Valor médio nos testes

Asgard VMA42UG-MEC1U2AW1 8GB

Razões a considerar
Asgard VMA42UG-MEC1U2AW1 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

43 46

Por volta de -7% menor latência
Velocidade de escrita mais rápida, GB/s

8.0 1,519.2

Valor médio nos testes
Maior largura de banda de memória, mbps

21300 3200

Por volta de 6.66 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T3354BZ0-CCC 256MB

Asgard VMA42UG-MEC1U2AW1 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

46 43
Velocidade de leitura, GB/s

2,909.8 14.7
Velocidade de escrita, GB/s

1,519.2 8.0
Largura de banda de memória, mbps

3200 21300

Other

Descrição

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Tempos / Velocidade do relógio

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (Quanto mais, melhor)

241 2250

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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