RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
201
RAM
Samsung M3 78T6553EZS-CF7 512MB
Latency
47
Read speed
3,575.4
Write speed
2,021.5
№
202
RAM
Nanya Technology M2Y2G64TU8HC4B-AC 2GB
Latency
47
Read speed
6,512.4
Write speed
2,320.8
№
203
RAM
Corsair CM2X2048-8500C5D 2GB
Latency
47
Read speed
5,848.9
Write speed
2,531.1
№
204
RAM
Corsair VS1GB800D2 1GB
Latency
47
Read speed
4,680.7
Write speed
1,361.1
№
205
RAM
Nanya Technology M2Y51264TU88A4B-3C 512MB
Latency
47
Read speed
2,483.8
Write speed
1,905.9
№
206
RAM
Positivo Informatica Ltd AU2G732-800P005-C 2GB
Latency
47
Read speed
5,295.9
Write speed
2,290.6
№
207
RAM
Infineon (Siemens) AET560UD00-370A98Z 256MB
Latency
47
Read speed
3,627.2
Write speed
1,746.7
№
208
RAM
Positivo Informatica Ltd AU2G732-800P005-E 2GB
Latency
47
Read speed
4,927.8
Write speed
1,805.9
№
209
RAM
A-DATA Technology NYQVE0A16 1GB
Latency
47
Read speed
3,306.4
Write speed
1,270.3
№
210
RAM
Crucial Technology BL12864AA80A.8FH5 1GB
Latency
47
Read speed
4,938.6
Write speed
2,189.9
№
211
RAM
Nanya Technology NT1GT64U8HB0BY-25C 1GB
Latency
47
Read speed
4,833.1
Write speed
1,947.2
№
212
RAM
Kingston 9905321-026.A00LF 2GB
Latency
47
Read speed
5,059.8
Write speed
2,219.4
№
213
RAM
Crucial Technology BL12864AL106A.8FE5 1GB
Latency
47
Read speed
5,867.1
Write speed
2,654.5
№
214
RAM
Kingston 9905403-001.A03LLs 2GB
Latency
47
Read speed
4,972.5
Write speed
1,999.4
№
215
RAM
Golden Empire 2GB DDR2 1066CAS=5 2GB
Latency
47
Read speed
5,802.4
Write speed
2,565.1
№
216
RAM
Nanya Technology NT1GT72U8PB0BY-37B 1GB
Latency
47
Read speed
4,656.0
Write speed
1,614.7
№
217
RAM
Crucial Technology CT12864AA667.C8FMD 1GB
Latency
47
Read speed
5,328.1
Write speed
2,221.6
№
218
RAM
Crucial Technology CT12864AA667.M8FJ3 1GB
Latency
47
Read speed
4,801.6
Write speed
2,094.6
№
219
RAM
takeMS International AG TMS1GB264C082665AP 1GB
Latency
47
Read speed
4,865.4
Write speed
1,998.8
№
220
RAM
Kingmax Semiconductor KLDD48F-B8KW5 1GB
Latency
47
Read speed
5,067.2
Write speed
1,820.7
«
8
9
10
11
12
13
»
Últimas comparações
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M471A2K43CB1-CRC 16GB
Protocol Engines Kingrock 800 2GB 2GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology GD2.1542WS.001 8GB
Kingston 9965516-112.A00LF 16GB
SK Hynix HMA851U6AFR6N-UH 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X16GE2933C19S2 16MB
Kingston 99U5458-002.A00LF 2GB
Kingston KF3200C16D4/16GX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M2C3466C16 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMR32GX4M4C3200C16 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M393A2G40EB1-CRC 16GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
