RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR3 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2601
RAM
Corsair CMP8GX3M2B1333C9 4GB
Latency
36
Read speed
14.2
Write speed
8.0
№
2602
RAM
Patriot Memory (PDP Systems) PSD34G13332S 4GB
Latency
36
Read speed
8.4
Write speed
5.9
№
2603
RAM
Micron Technology 16KTF1G64HZ-1G6D1 8GB
Latency
36
Read speed
9.9
Write speed
6.9
№
2604
RAM
SK Hynix HMT451U6DFR8A-PB 4GB
Latency
36
Read speed
12.7
Write speed
7.2
№
2605
RAM
Crucial Technology BLS4G3D1609ES2LX0. 4GB
Latency
36
Read speed
15.1
Write speed
10.0
№
2606
RAM
G Skill Intl F3-1333C9-8GSA 8GB
Latency
36
Read speed
3.9
Write speed
2.4
№
2607
RAM
Avant Technology F6451U67F1600G 4GB
Latency
36
Read speed
14.7
Write speed
8.5
№
2608
RAM
Crucial Technology BLS8G3D18ADS3.16FE 8GB
Latency
36
Read speed
14.9
Write speed
10.1
№
2609
RAM
Samsung M471B1G73AH0-CH9 8GB
Latency
36
Read speed
8.3
Write speed
5.2
№
2610
RAM
Kingston HX316C10F/8 8GB
Latency
36
Read speed
14.7
Write speed
9.2
№
2611
RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AMP4C-G7 8GB
Latency
36
Read speed
10.4
Write speed
8.4
№
2612
RAM
Avexir Technologies Corporation DDR3-1600 CL11 8GB 8GB
Latency
36
Read speed
14.7
Write speed
9.5
№
2613
RAM
Kingston 9905402-570.A00LF 4GB
Latency
36
Read speed
13.2
Write speed
7.3
№
2614
RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Latency
36
Read speed
9.0
Write speed
8.0
№
2615
RAM
Kingston 9905471-009.A00LF 4GB
Latency
36
Read speed
13.5
Write speed
8.6
№
2616
RAM
Crucial Technology BLT4G3D1869DT2TXRG 4GB
Latency
36
Read speed
14.6
Write speed
9.3
№
2617
RAM
G Skill Intl F3-1866C9-4GAB 4GB
Latency
36
Read speed
14.8
Write speed
10.6
№
2618
RAM
Samsung M471B5273BH1-CF8 4GB
Latency
36
Read speed
7.6
Write speed
6.6
№
2619
RAM
G Skill Intl F3-1866C9-8GSR 8GB
Latency
36
Read speed
15.9
Write speed
10.1
№
2620
RAM
Nanya Technology M2F2G64CB88G4N-DI 2GB
Latency
36
Read speed
12.8
Write speed
7.9
«
128
129
130
131
132
133
»
Últimas comparações
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905703-009.A00G 16GB
A-DATA Technology DQVE1908 512MB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C15-4GRB 4GB
A-DATA Technology DQKD1A08 1GB
Panram International Corporation D4U2666P-8G 8GB
Samsung M471B5273CH0-CH9 4GB
Transcend Information JM2666HSB-16G 16GB
Crucial Technology CT25664AA800.M16FM 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston CBD26D4S9D8ME-16 16GB
Corsair CMX4GX3M1A1333C9 4GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Corsair CMK16GX4M2D3000C16 8GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
