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Сравнить
DDR3 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2301
RAM
Micron Technology 18JSF51272PZ-1G4M1 4GB
Latency
32
Read speed
12.2
Write speed
8.5
№
2302
RAM
Smart Modular SH564568FH8N0QHSCR 2GB
Latency
32
Read speed
8.5
Write speed
3.7
№
2303
RAM
Micron Technology 18KSF51272AZ-1G6K1 4GB
Latency
32
Read speed
10.9
Write speed
9.0
№
2304
RAM
Micron Technology 18KSF51272PZ-1G6K1 4GB
Latency
32
Read speed
9.4
Write speed
7.6
№
2305
RAM
Crucial Technology CT8G3S1339M.M16FED 8GB
Latency
32
Read speed
10.4
Write speed
7.3
№
2306
RAM
G Skill Intl F3-2133C10-4GXM 4GB
Latency
32
Read speed
15.3
Write speed
10.2
№
2307
RAM
G Skill Intl F3-2133C11-4GAO 4GB
Latency
32
Read speed
15.9
Write speed
10.1
№
2308
RAM
Swissbit SLN08G72G2BD2SA-DC 8GB
Latency
32
Read speed
11.4
Write speed
8.5
№
2309
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325U6CFR8C-PB 2GB
Latency
32
Read speed
11.6
Write speed
8.6
№
2310
RAM
Micron Technology 99U5403-159.A01LF 8GB
Latency
32
Read speed
7.7
Write speed
4.2
№
2311
RAM
Nanya Technology M2S8G64CB8HB5N-DI 8GB
Latency
32
Read speed
10.6
Write speed
7.4
№
2312
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325U6EFR8C-PB 2GB
Latency
32
Read speed
12.4
Write speed
8.9
№
2313
RAM
Kingston 9905403-173.A00LF 2GB
Latency
33
Read speed
13.8
Write speed
9.2
№
2314
RAM
Hynix Semiconductor (Hyundai Electronics) HMT351U7BFR8A-H9 4GB
Latency
33
Read speed
11.2
Write speed
7.3
№
2315
RAM
AMD AP38G1869U2S 8GB
Latency
33
Read speed
15.2
Write speed
9.9
№
2316
RAM
Crucial Technology CT51264BD160BJ.C8F 4GB
Latency
33
Read speed
14.3
Write speed
8.5
№
2317
RAM
Corsair CMY8GX3M2A2133C9 4GB
Latency
33
Read speed
15.5
Write speed
9.2
№
2318
RAM
Samsung EG07011469-703 8GB
Latency
33
Read speed
8.1
Write speed
6.1
№
2319
RAM
Kingston KR1P74-HYC 4GB
Latency
33
Read speed
8.5
Write speed
6.6
№
2320
RAM
Team Group Inc. TEAMGROUP-SD3-1333 8GB
Latency
33
Read speed
7.9
Write speed
4.0
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Последние сравнения
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965662-019.A00G 32GB
Samsung M378B5273CH0-CH9 4GB
PUSKILL PJ16TFK1GM8 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Kingston 9905403-437.A01LF 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston X6TCK6-MIE 32GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2666C18-4GFX 4GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A5143TB2-CTD 4GB
Kingston KVR800D2N6/2G 2GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CB8GU2400.C8JT 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Panram International Corporation L421008G4C1528K34O8A 8
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Kingston 99U5429-007.A00LF 2GB
Panram International Corporation W4U2133PS-8G 8GB
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