Samsung M4 70T2864EH3-CE6 1GB
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Samsung M4 70T2864EH3-CE6 1GB

Review RAM Samsung M4 70T2864EH3-CE6 1GB, specifications, benchmarks

Samsung M4 70T2864EH3-CE6 1GB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR2
  • Name
    Samsung M4 70T2864EH3-CE6
  • Characteristics
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Memory bandwidth
    5300 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    5-5-5-15 / 667 MHz
Performance by PassMark
  • Latency
    67 ns
  • Read speed
    2,058.7 GB/s
  • Write speed
    1,122.9 GB/s
# 333 400 533 667 800 933 1067 MT/s
4 12.00 10.00 7.50 6.00 5.00 4.29 3.75
5 15.00 12.50 9.38 7.50 6.25 5.36 4.69
6 18.00 15.00 11.25 9.00 7.50 6.43 5.62
7 21.00 17.50 13.13 10.50 8.75 7.50 6.56
8 24.00 20.00 15.00 12.00 10.00 8.57 7.50
9 27.00 22.50 16.88 13.50 11.25 9.64 8.44
10 30.00 25.00 18.75 15.00 12.50 10.71 9.37
11 33.00 27.50 20.63 16.50 13.75 11.79 10.31
12 36.00 30.00 22.50 18.00 15.00 12.86 11.25
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

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Samsung M4 70T2864EH3-CE6 1GB