A-DATA Technology AD73I1B1672EG 2GB vs G Skill Intl F4-3200C15-16GTZSK 16GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

G Skill Intl F4-3200C15-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

19.3 12.2

测试中的平均数值
更快的写入速度，GB/s

15.8 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3200C15-16GTZSK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.2 19.3
写入速度，GB/s

8.5 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 3964

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB