A-DATA Technology AD73I1B1672EG 2GB vs Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

报告一个错误

更快的读取速度，GB/s

15.6 12.2

测试中的平均数值
更快的写入速度，GB/s

12.7 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

12.2 15.6
写入速度，GB/s

8.5 12.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1677 3164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 99U5702-020.A00G 8GB

Kingston 99U5702-020.A00G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 99U5734-036.A00G 16GB

Kingston 99U5734-036.A00G 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB