A-DATA Technology AD73I1C1674EV 4GB vs Corsair CM4X4GD3000C16K2 4GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Corsair CM4X4GD3000C16K2 4GB

Corsair CM4X4GD3000C16K2 4GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Corsair CM4X4GD3000C16K2 4GB

需要考虑的原因
Corsair CM4X4GD3000C16K2 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 40

左右 -111% 更低的延时
更快的读取速度，GB/s

19.6 11.3

测试中的平均数值
更快的写入速度，GB/s

16.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Corsair CM4X4GD3000C16K2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 19
读取速度，GB/s

11.3 19.6
写入速度，GB/s

7.5 16.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3165

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HYMP112U64CP8-Y5 1GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8