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Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB vs V-Color Technology Inc. TN48G26S819-SB 8GB

总分
star star star star star
Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分
star star star star star
V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

差异 规格 评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB 需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB
报告一个错误
V-Color Technology Inc. TN48G26S819-SB 8GB 需要考虑的原因
V-Color Technology Inc. TN48G26S819-SB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 65
    左右 -160% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 4.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 25
  • 读取速度，GB/s
    6.1 left arrow 16.8
  • 写入速度，GB/s
    4.2 left arrow 13.6
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    985 left arrow 2889

Elpida EBJ10UE8BAFA-AE-E 1GB RAM的比较

Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
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Corsair CMK64GX4M4K3733C17 16GB
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Kingston 9905624-016.A00G 8GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMSO16GX4M1A2133C15 16GB
Corsair CMSO16GX4M1A2133C15 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung M471A1K1KBB1-CRC 8GB
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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Corsair CMW16GX4M2K4266C19 8GB
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SpecTek Incorporated ?????????????????? 2GB
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Corsair MK16GX44B3000C15 4GB
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Samsung M393B1K70CH0-CH9 8GB
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Avant Technology W642GU42J2320NH 16GB
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Kingston KHX2400C11D3/4GX 4GB
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Unifosa Corporation HU564404EP0200 4GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
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Kingston K1N7HK-ELC 2GB
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Kingston 9965600-018.A00G 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Micron Technology AFSD416ES1P 16GB
内存RAM
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Corsair CML8GX3M2A1600C9 4GB
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Micron Technology 8ATF2G64HZ-2G3A1 16GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Patriot Memory (PDP Systems) 3200 C16 Series 8GB
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