takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 8ATF2G64HZ-3G2B2 16GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2B2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2B2 16GB

报告一个错误

低于PassMark测试中的延时，ns

46 50

左右 -9% 更低的延时
更快的写入速度，GB/s

9.8 1,457.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 46
读取速度，GB/s

3,757.3 15.9
写入速度，GB/s

1,457.4 9.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

557 2632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D083805EV 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT16G4DFD8266.M16FE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Transcend Information AQD-SD4U4GN21-SG 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT16G4DFD832A.M16FR 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB