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takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
16
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
50
左右 -108% 更低的延时
更快的写入速度,GB/s
12.5
1,457.4
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
24
读取速度,GB/s
3,757.3
16.0
写入速度,GB/s
1,457.4
12.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
557
2925
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Avant Technology J642GU42J7240N4 16GB
Samsung M471A1G44BB0-CWE 8GB
G Skill Intl F4-3200C22-8GRS 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.01G86.9H50C 1GB
Panram International Corporation W4U2400PS-4G 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT351S6BFR8C-H9 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW32GX4M2D3600C18 16GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9965669-008.A03G 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905665-009.A00G 4GB
Kingston ACR16D3LS1KNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston ACR26D4S9D8ME-16 16GB
报告一个错误
×
Bug description
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