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takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99P5316-014.A00LF 4GB

takeMS International AG TMS2GB264D083805EV 2GB vs Kingston 99P5316-014.A00LF 4GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Kingston 99P5316-014.A00LF 4GB

Kingston 99P5316-014.A00LF 4GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 77
    左右 35% 更低的延时
Kingston 99P5316-014.A00LF 4GB 需要考虑的原因
Kingston 99P5316-014.A00LF 4GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,279.6 left arrow 1,457.4
    测试中的平均数值

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99P5316-014.A00LF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    50 left arrow 77
  • 读取速度，GB/s
    3,757.3 left arrow 3,872.0
  • 写入速度，GB/s
    1,457.4 left arrow 2,279.6
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    557 left arrow 713

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 99P5316-014.A00LF 4GB RAM的比较

Kingston 99U5429-007.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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