A-DATA Technology VDQVE1B16 2GB vs Corsair CMK32GX4M4Z2933C16 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 47

左右 2% 更低的延时
更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,061.2 13.5

测试中的平均数值

Corsair CMK32GX4M4Z2933C16 8GB

需要考虑的原因
Corsair CMK32GX4M4Z2933C16 8GB

报告一个错误

更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMK32GX4M4Z2933C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 47
读取速度，GB/s

4,937.3 14.7
写入速度，GB/s

2,061.2 13.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 3275

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Samsung M378A5244CB0-CVF 4GB