A-DATA Technology AD73I1C1674EV 4GB vs Corsair CMK32GX4M2B3333C16 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Corsair CMK32GX4M2B3333C16 16GB

Corsair CMK32GX4M2B3333C16 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Corsair CMK32GX4M2B3333C16 16GB

需要考虑的原因
Corsair CMK32GX4M2B3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

19 40

左右 -111% 更低的延时
更快的读取速度，GB/s

20.7 11.3

测试中的平均数值
更快的写入速度，GB/s

16.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMK32GX4M2B3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 19
读取速度，GB/s

11.3 20.7
写入速度，GB/s

7.5 16.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW8GX4M1Z3200C16 8GB

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Samsung M391B5673EH1-CH9 2GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Panram International Corporation D4N2666PS-16G 16GB

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Kingston ACR16D3LS1NGG/2G 2GB

Kingston 9905625-030.A00G 8GB

Kingston 9905625-030.A00G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

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Corsair CMK64GX4M2Z4000C18 32GB

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Kingston 9905584-016.A00LF 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB