A-DATA Technology AD73I1C1674EV 4GB vs Corsair CMK64GX4M4A2400C16 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Corsair CMK64GX4M4A2400C16 16GB

Corsair CMK64GX4M4A2400C16 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Corsair CMK64GX4M4A2400C16 16GB

需要考虑的原因
Corsair CMK64GX4M4A2400C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 40

左右 -8% 更低的延时
更快的读取速度，GB/s

15.1 11.3

测试中的平均数值
更快的写入速度，GB/s

12.2 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMK64GX4M4A2400C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 37
读取速度，GB/s

11.3 15.1
写入速度，GB/s

7.5 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG16GX4M2E3200C16 8GB

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Samsung M471B5673FH0-CF8 2GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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G Skill Intl F4-2800C15-8GRBB 8GB

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PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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SK Hynix HMA82GU7AFR8N-UH 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB