A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3000C14-16GTZR 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

G Skill Intl F4-3000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 40

左右 -3% 更低的延时
更快的读取速度，GB/s

14.9 11.3

测试中的平均数值
更快的写入速度，GB/s

15.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3000C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 39
读取速度，GB/s

11.3 14.9
写入速度，GB/s

7.5 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663EH3-CF7 2GB

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Corsair CM2X2048-8500C5C 2GB

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-3000C14-16GTZR 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Corsair CM4X8GF2133C15S2 8GB

Corsair CM4X8GF2133C15S2 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

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