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Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB

Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 31
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 16.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 11.7
    测试中的平均数值
Crucial Technology CT16G4DFRA266.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 31
  • 读取速度，GB/s
    22.8 left arrow 16.3
  • 写入速度，GB/s
    15.4 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 3179

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT16G4DFRA266.C8FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F4-2400C17-8GISM 8GB
内存RAM
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905665-014.A00G 4GB
Kingston 9905665-014.A00G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CMSX8GX4M1A2666C18 8GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
内存RAM