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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    24 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 29
  • 读取速度，GB/s
    16.9 left arrow 24.0
  • 写入速度，GB/s
    12.0 left arrow 20.0
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 4156

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C14-16GRK 16GB
G Skill Intl F4-2400C14-16GRK 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
Samsung M393B1K70DH0-CH9 8GB
Samsung M393B1K70DH0-CH9 8GB
Samsung M393B2G70DB0-CMA 16GB
Samsung M393B2G70DB0-CMA 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
内存RAM