A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3200C14-32GTRS 32GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

G Skill Intl F4-3200C14-32GTRS 32GB

需要考虑的原因
G Skill Intl F4-3200C14-32GTRS 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 40

左右 -25% 更低的延时
更快的读取速度，GB/s

24.1 11.3

测试中的平均数值
更快的写入速度，GB/s

16.6 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 32
读取速度，GB/s

11.3 24.1
写入速度，GB/s

7.5 16.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1654 4001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Corsair CMK32GX4M2A2800C16 16GB

Corsair CMK32GX4M2A2800C16 16GB

Kingston ACR512X64D3S13C9G 4GB

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EVGA 8GX-D4-3200-MR 8GB

EVGA 8GX-D4-3200-MR 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB