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A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C16-16GTZKW 16GB
比较
A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3200C16-16GTZKW 16GB
总分
A-DATA Technology AD73I1C1674EV 4GB
总分
G Skill Intl F4-3200C16-16GTZKW 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C16-16GTZKW 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
40
左右 -38% 更低的延时
更快的读取速度,GB/s
18.1
11.3
测试中的平均数值
更快的写入速度,GB/s
14.2
7.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C16-16GTZKW 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
29
读取速度,GB/s
11.3
18.1
写入速度,GB/s
7.5
14.2
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1654
3563
A-DATA Technology AD73I1C1674EV 4GB RAM的比较
Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB
G Skill Intl F4-3200C16-16GTZKW 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMA451U6AFR8N-TF 4GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
Crucial Technology 16G4UD2400.C16BD1 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-2666C19-32GNT 32GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9965684-013.A00G 8GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD64GX4M4B3466C16 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK64GX4M2A2400C16 32GB
Kingston 9965525-155.A00LF 8GB
SK Hynix HMA82GU7MFR8N-TF 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3333C16-8GTZB 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
AMD R744G2606U1S 4GB
报告一个错误
×
Bug description
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