A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-4000C19-16GTRS 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

G Skill Intl F4-4000C19-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 40

左右 -25% 更低的延时
更快的读取速度，GB/s

17 11.3

测试中的平均数值
更快的写入速度，GB/s

13.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-4000C19-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 32
读取速度，GB/s

11.3 17.0
写入速度，GB/s

7.5 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Apacer Technology 78.CAGMR.ARC0B 8GB

Apacer Technology 78.CAGMR.ARC0B 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston KHX2133C15S4/8G 8GB

Kingston KHX2133C15S4/8G 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Samsung M471A2K43CB1-CTD 16GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

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Kingston KHX1600C9S3L/8G 8GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB