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A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL15-15-15 D4-2666 4GB

A-DATA Technology AD73I1C1674EV 4GB vs Golden Empire CL15-15-15 D4-2666 4GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Golden Empire CL15-15-15 D4-2666 4GB 需要考虑的原因
Golden Empire CL15-15-15 D4-2666 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL15-15-15 D4-2666 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 26
  • 读取速度，GB/s
    11.3 left arrow 13.4
  • 写入速度，GB/s
    7.5 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 2673

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Golden Empire CL15-15-15 D4-2666 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL15-15-15 D4-2666 4GB
Golden Empire CL15-15-15 D4-2666 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-2133C15-8GRK 8GB
G Skill Intl F4-2133C15-8GRK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
G Skill Intl F4-4400C19-32GTZR 32GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Essencore Limited KD48GU881-26N190D 8GB
Essencore Limited KD48GU881-26N190D 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
内存RAM