G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology CT16G4SFD832A.C16FN 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Crucial Technology CT16G4SFD832A.C16FN 16GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 34

左右 9% 更低的延时
更快的读取速度，GB/s

17.4 16.4

测试中的平均数值

Crucial Technology CT16G4SFD832A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FN 16GB

报告一个错误

更快的写入速度，GB/s

16.1 10.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 34
读取速度，GB/s

17.4 16.4
写入速度，GB/s

10.9 16.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2735 3324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire CL16-18-18 D4-3200 8GB

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Samsung M391B5673FH0-CH9 2GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

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Samsung M393B2G70BH0-YK0 16GB

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A-DATA Technology AE4S240038G17-BHYA 8GB

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Transcend Information TS2GLH64V1B 16GB

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Kingston KHX1866C9D3/8GX 8GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

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Kingston KTC1G-UDIMM 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

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Kingston 9965525-018.A00LF 4GB

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Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB