A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

A-DATA Technology AD73I1C1674EV 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 122

左右 67% 更低的延时
更快的读取速度，GB/s

11.3 9.4

测试中的平均数值
更快的写入速度，GB/s

7.5 5.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 122
读取速度，GB/s

11.3 9.4
写入速度，GB/s

7.5 5.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1654 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK64GX4M8X4000C19 8GB

Corsair CMK64GX4M8X4000C19 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Corsair CMK32GX4M4B3466C16 8GB

Corsair CMK32GX4M4B3466C16 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB