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A-DATA Technology AD73I1C1674EV 4GB
Panram International Corporation PUD43000C158G2NJK 8GB

A-DATA Technology AD73I1C1674EV 4GB vs Panram International Corporation PUD43000C158G2NJK 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Panram International Corporation PUD43000C158G2NJK 8GB 需要考虑的原因
Panram International Corporation PUD43000C158G2NJK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 40
    左右 -111% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 19
  • 读取速度，GB/s
    11.3 left arrow 19.8
  • 写入速度，GB/s
    7.5 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3370

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Panram International Corporation PUD43000C158G2NJK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMH32GX4M2E3200C16 16GB
Corsair CMH32GX4M2E3200C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
内存RAM