A-DATA Technology AD73I1C1674EV 4GB vs Samsung M474A1G43EB1-CRC 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Samsung M474A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 40

左右 -82% 更低的延时
更快的读取速度，GB/s

17.2 11.3

测试中的平均数值
更快的写入速度，GB/s

13.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Samsung M474A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 22
读取速度，GB/s

11.3 17.2
写入速度，GB/s

7.5 13.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1654 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Panram International Corporation W4U2400PS-4G 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Corsair CMR16GX4M2F4000C19 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Samsung M474A1G43EB1-CRC 8GB

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Apacer Technology D12.2324WT.001 8GB

Apacer Technology D12.2324WT.001 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB