A-DATA Technology ADOVE1A0834E 1GB vs Corsair CMR16GX4M2D3000C16 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Corsair CMR16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 94

左右 -248% 更低的延时
更快的读取速度，GB/s

18.1 1

测试中的平均数值
更快的写入速度，GB/s

13.9 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMR16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 27
读取速度，GB/s

1,882.0 18.1
写入速度，GB/s

1,165.4 13.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3365

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP125S64CP8-S6 2GB

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Samsung M471A2K43BB1-CTD 16GB

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TwinMOS 9DEPBOZE-TATP 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Swissbit SEU25664D6BC2EP-30 2GB

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Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology CT16G4DFD824A.C16FHD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Kingston KVR800D2N6/2G 2GB

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G Skill Intl F4-3000C16-8GVRB 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB