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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology BLS16G4S240FSD.16FBD 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology BLS16G4S240FSD.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 94
    左右 -147% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 38
  • 读取速度，GB/s
    1,882.0 left arrow 14.3
  • 写入速度，GB/s
    1,165.4 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2638

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3333C16-16GTZKW 16GB
G Skill Intl F4-3333C16-16GTZKW 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CMSX8GX4M1A2666C18 8GB
内存RAM