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A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB

A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-4200C19-4GTZ 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
G Skill Intl F4-4200C19-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-4200C19-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    75 left arrow 94
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 75
  • 读取速度，GB/s
    1,882.0 left arrow 14.5
  • 写入速度，GB/s
    1,165.4 left arrow 7.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 1735

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-4200C19-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B1G70BH0-YK0 8GB
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G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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SK Hynix HMT325S6CFR8C-H9 2GB
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Crucial Technology BLS8G4D30AESCK.M8FE 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Micron Technology 9ASF1G72PZ-2G9E1 8GB
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A-DATA Technology DDR2 800G 2GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
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G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
内存RAM
Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM