A-DATA Technology ADOVE1A0834E 1GB vs Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 94

左右 -276% 更低的延时
更快的读取速度，GB/s

14.5 1

测试中的平均数值
更快的写入速度，GB/s

13.0 1,165.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 25
读取速度，GB/s

1,882.0 14.5
写入速度，GB/s

1,165.4 13.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

305 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Kingston 99U5471-037.A00LF 8GB

Kingston 99U5471-037.A00LF 8GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905630-018.A00G 8GB

Kingston 9905630-018.A00G 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB