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A-DATA Technology ADOVE1A0834E 1GB
Kingston ACR26D4S9S8KA-8 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Kingston ACR26D4S9S8KA-8 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kingston ACR26D4S9S8KA-8 8GB 需要考虑的原因
Kingston ACR26D4S9S8KA-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 94
    左右 -147% 更低的延时
  • 更快的读取速度，GB/s
    9 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.1 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kingston ACR26D4S9S8KA-8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 38
  • 读取速度，GB/s
    1,882.0 left arrow 9.0
  • 写入速度，GB/s
    1,165.4 left arrow 7.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 1546

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kingston ACR26D4S9S8KA-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Lenovo 16GB
Lenovo 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
A-DATA Technology AO1P32NC8T1-BCSS 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
内存RAM