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A-DATA Technology ADOVE1A0834E 1GB
Kingston LV26D4S9S8HJ-8 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Kingston LV26D4S9S8HJ-8 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kingston LV26D4S9S8HJ-8 8GB

Kingston LV26D4S9S8HJ-8 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kingston LV26D4S9S8HJ-8 8GB 需要考虑的原因
Kingston LV26D4S9S8HJ-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 94
    左右 -176% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kingston LV26D4S9S8HJ-8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 34
  • 读取速度，GB/s
    1,882.0 left arrow 17.1
  • 写入速度，GB/s
    1,165.4 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3083

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kingston LV26D4S9S8HJ-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Kingston 9905624-036.A00G 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK8GX4M2A2400C16 4GB
Corsair CMK8GX4M2A2400C16 4GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
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Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
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Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Strontium SRT8G86U1-P9H 8GB
Strontium SRT8G86U1-P9H 8GB
Corsair CMX8GX3M2A1600C9 4GB
Corsair CMX8GX3M2A1600C9 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GVK 8GB
G Skill Intl F4-3200C14-8GVK 8GB
内存RAM