A-DATA Technology ADOVE1A0834E 1GB vs Micron Technology 16G2666CL19 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Micron Technology 16G2666CL19 16GB

需要考虑的原因
Micron Technology 16G2666CL19 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 94

左右 -292% 更低的延时
更快的读取速度，GB/s

15.4 1

测试中的平均数值
更快的写入速度，GB/s

8.2 1,165.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Micron Technology 16G2666CL19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 24
读取速度，GB/s

1,882.0 15.4
写入速度，GB/s

1,165.4 8.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

305 2438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 9905701-008.A00G 16GB

Kingston 9905701-008.A00G 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB