A-DATA Technology ADOVE1A0834E 1GB vs Teclast TLD416G26A30 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Teclast TLD416G26A30 16GB

需要考虑的原因
Teclast TLD416G26A30 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 94

左右 -161% 更低的延时
更快的读取速度，GB/s

15.9 1

测试中的平均数值
更快的写入速度，GB/s

13.1 1,165.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Teclast TLD416G26A30 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 36
读取速度，GB/s

1,882.0 15.9
写入速度，GB/s

1,165.4 13.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

305 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Roa Logic BV iGame DDR4 8G 3000 8GB

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Samsung M378B5673EH1-CF8 2GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Kingston KHX3333C17D4/4GX 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB